2SK3683-01MR MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3683-01MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 97 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 19 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 34 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 230 pF
Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm
Package: TO220F
2SK3683-01MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3683-01MR Datasheet (PDF)
1.1. 2sk3683-01mr.pdf 
Size:103K _fuji
2SK3683-01MR 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C un
4.1. 2sk3685-01.pdf Size:105K _update
2SK3685-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance 11.6±0.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C
4.2. 2sk3681-01.pdf Size:116K _update
2SK3681-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance 11.6±0.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C
4.3. 2sk3688-01l-01s-01sj.pdf Size:232K _update
2SK3688-01L,S,SJ FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching Low on-resistance No secondary breadown Low driving power P4 Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unle
4.4. 2sk3686-01.pdf Size:193K _update
FUJI POWER MOSFET 2SK3686-01 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unl
4.5. 2sk3682-01.pdf Size:101K _update
2SK3682-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C
4.6. 2sk3684-01l-01s-01sj.pdf Size:262K _update
2SK3684-01L,S,SJ 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C
4.7. 2sk3680-01.pdf Size:109K _update
2SK3680-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance 11.6±0.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C
4.8. 2sk3689-01.pdf Size:108K _update
2SK3689-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance 11.6±0.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C
4.9. 2sk368.pdf Size:627K _toshiba
2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Unit: mm Constant Current Applications • High breakdown voltage: VGDS = -100 V (min) • High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gat
4.10. 2sk3687-01mr.pdf Size:194K _fuji
FUJI POWER MOSFET 2SK3687-01MR 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unl
Datasheet: AP4835GMT-HF , 2SK1940-01 , 2SK2552 , 2SK2645-01MR , 2SK2654-01 , 2SK2761-01MR , 2SK2765-01 , 2SK3496-01MR , 2SK163 , 2SK4075 , 2SK659 , AP4880BGM-HF , AP4880GM , AP4920GM-HF , AP4924GM , AP4933GM-HF , AP4936GM .
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