All MOSFET. AP50T10AGI-HF Datasheet

 

AP50T10AGI-HF Datasheet and Replacement


   Type Designator: AP50T10AGI-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO220F
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AP50T10AGI-HF Datasheet (PDF)

 ..1. Size:56K  ape
 ap50t10agi-hf.pdf pdf_icon

AP50T10AGI-HF

AP50T10AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 33m Fast Switching Characteristic ID 34AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10A series are from Advanced Power innovated designand silicon process technology to achieve the lowes

 4.1. Size:165K  ape
 ap50t10agi.pdf pdf_icon

AP50T10AGI-HF

AP50T10AGI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 33m Lower Gate Charge Fast Switching Characteristic ID 34AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10A series are from Advanced Power innova

 7.1. Size:94K  ape
 ap50t10gm-hf.pdf pdf_icon

AP50T10AGI-HF

AP50T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 7.2. Size:58K  ape
 ap50t10gi-hf.pdf pdf_icon

AP50T10AGI-HF

AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

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History: CEP02N7G | AP50T10GJ | AP50T10GS

Keywords - AP50T10AGI-HF MOSFET datasheet

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