All MOSFET. AP60N03GS Datasheet

 

AP60N03GS MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP60N03GS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO263

 AP60N03GS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP60N03GS Datasheet (PDF)

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 ap60n03gs.pdf

AP60N03GS AP60N03GS

AP60N03GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 6.1. Size:162K  ape
 ap60n03gp.pdf

AP60N03GS AP60N03GS

AP60N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching Characteristic RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS Compliant & Halogen-FreeSDescriptionAP60N03 series are from Advanced Power innovated design andGsilicon process technology to achieve the l

 6.2. Size:61K  ape
 ap60n03gh ap60n03gj.pdf

AP60N03GS AP60N03GS

AP60N03GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS CompliantSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized d

 9.1. Size:248K  ape
 ap60n2r5in.pdf

AP60N03GS AP60N03GS

AP60N2R5INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP60N2R5 series are from Advanced Power innovated design andsilicon process technology to achieve

 9.2. Size:199K  ape
 ap60n2r5j.pdf

AP60N03GS AP60N03GS

AP60N2R5JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP60N2R5 series are from Advanced Power innovated design and GDSTO-251(J)silicon process technology to achi

 9.3. Size:389K  ncepower
 nceap60nd30ag.pdf

AP60N03GS AP60N03GS

http://www.ncepower.comNCEAP60ND30AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =15m (typical) @ V =4.5VDS

 9.4. Size:644K  ncepower
 nceap60nd60g.pdf

AP60N03GS AP60N03GS

NCEAP60ND60Ghttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60ND60G uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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