All MOSFET. AP60T10GP Datasheet

 

AP60T10GP Datasheet and Replacement


   Type Designator: AP60T10GP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220
 

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AP60T10GP Datasheet (PDF)

 ..1. Size:95K  ape
 ap60t10gp ap60t10gs.pdf pdf_icon

AP60T10GP

AP60T10GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GTO-220(P)ruggedized device design,

 0.1. Size:96K  ape
 ap60t10gp-hf ap60t10gs-hf.pdf pdf_icon

AP60T10GP

AP60T10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resi

 6.1. Size:58K  ape
 ap60t10gi-hf.pdf pdf_icon

AP60T10GP

AP60T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 34AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-res

 8.1. Size:713K  ncepower
 nceap60t15g.pdf pdf_icon

AP60T10GP

http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R

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Datasheet: AP60T03GH-HF , AP60T03GI , AP60T03GJ-HF , AP60T03GP , AP60T03GS , AP60T06GJ-HF , AP60T06GP-HF , AP60T10GI-HF , SPP20N60C3 , AP60T10GS , AP62T03GH , AP62T03GJ , AP6618GM-HF , AP6677GH , AP6679BGH-HF , AP6679BGI-HF , AP6679BGM-HF .

History: HMS21N60F | IRFSL3107PBF | SI1013X | AON6206

Keywords - AP60T10GP MOSFET datasheet

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