AP6680BGM-HF Specs and Replacement

Type Designator: AP6680BGM-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SO-8

AP6680BGM-HF substitution

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AP6680BGM-HF datasheet

 ..1. Size:93K  ape
ap6680bgm-hf.pdf pdf_icon

AP6680BGM-HF

AP6680BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f... See More ⇒

 6.1. Size:96K  ape
ap6680bgyt-hf.pdf pdf_icon

AP6680BGM-HF

AP6680BGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 16A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device desi... See More ⇒

 8.1. Size:196K  ape
ap6680agm.pdf pdf_icon

AP6680BGM-HF

AP6680AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, G ruggedized device design, ultra ... See More ⇒

 8.2. Size:59K  ape
ap6680cgyt-hf.pdf pdf_icon

AP6680BGM-HF

AP6680CGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15A G S D D Description D AP6680C series are from Advanced Power innovated design and silicon D process technology to achieve the lowest possible on-re... See More ⇒

Detailed specifications: 2SK665, 2SK669, 2SK704, 2SK709, 2SK720A, 2SK727-01, 2SK787, AP6680AGM, SI2302, AP6680BGYT-HF, AP6680CGYT-HF, AP6680SGYT-HF, AP6683GYT-HF, AP6800GEO, AP6900GSM, AP6901AGSM-HF, AP6901GSM-HF

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