2SK808 Specs and Replacement
Type Designator: 2SK808
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ -
Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
Package: TO-220
- MOSFET ⓘ Cross-Reference Search
2SK808 datasheet
..2. Size:201K inchange semiconductor
2sk808.pdf 
isc N-Channel MOSFET Transistor 2SK808 DESCRIPTION Drain Current I =1A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay ... See More ⇒
0.1. Size:201K inchange semiconductor
2sk808a.pdf
isc N-Channel MOSFET Transistor 2SK808A DESCRIPTION Drain Current I =1A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay... See More ⇒
9.8. Size:183K lrc
l2sk801lt1g.pdf
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 310 mAmps, 60 Volts L2SK801LT1G N Channel SOT 23 3 Pb-Free Package is Available. 1 2 CASE 318, STYLE 21 MAXIMUM RATINGS SOT 23 (TO 236AB) Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc 310 mAMPS Drain Current 60 VOLTS Continuous TC = 25 C (Note 1.) ID 3... See More ⇒
9.9. Size:197K inchange semiconductor
2sk805.pdf
isc N-Channel MOSFET Transistor 2SK805 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM... See More ⇒
9.10. Size:197K inchange semiconductor
2sk809a.pdf
isc N-Channel MOSFET Transistor 2SK809A DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay... See More ⇒
9.11. Size:197K inchange semiconductor
2sk807.pdf
isc N-Channel MOSFET Transistor 2SK807 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay ... See More ⇒
9.12. Size:201K inchange semiconductor
2sk806.pdf
isc N-Channel MOSFET Transistor 2SK806 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay ... See More ⇒
9.13. Size:199K inchange semiconductor
2sk803.pdf
isc N-Channel MOSFET Transistor 2SK803 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =160V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 160 V DSS GS V Gate-Source ... See More ⇒
9.14. Size:195K inchange semiconductor
2sk804.pdf
isc N-Channel MOSFET Transistor 2SK804 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =150V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 150 ... See More ⇒
9.15. Size:197K inchange semiconductor
2sk809.pdf
isc N-Channel MOSFET Transistor 2SK809 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay ... See More ⇒
Detailed specifications: AP6683GYT-HF, AP6800GEO, AP6900GSM, AP6901AGSM-HF, AP6901GSM-HF, 2SK800, 2SK805, 2SK806, AO3400A, 2SK808A, 2SK809, 2SK809A, 2SK812, 2SK817, 2SK821, 2SK823, 2SK824
Keywords - 2SK808 MOSFET specs
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