2SK829 Specs and Replacement
Type Designator: 2SK829
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
Package: TO-3P
2SK829 substitution
- MOSFET ⓘ Cross-Reference Search
2SK829 datasheet
Detailed specifications: 2SK809A, 2SK812, 2SK817, 2SK821, 2SK823, 2SK824, 2SK825, 2SK827, AON7403, 2SK881, 2SK882, 2SK941, 2SK951-MR, AP6902AGH-HF, AP6903GH-HF, AP6904GH-HF, AP6906GH-HF
Keywords - 2SK829 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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