2SK829 Specs and Replacement

Type Designator: 2SK829

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm

Package: TO-3P

2SK829 substitution

- MOSFET ⓘ Cross-Reference Search

 

2SK829 datasheet

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Detailed specifications: 2SK809A, 2SK812, 2SK817, 2SK821, 2SK823, 2SK824, 2SK825, 2SK827, AON7403, 2SK881, 2SK882, 2SK941, 2SK951-MR, AP6902AGH-HF, AP6903GH-HF, AP6904GH-HF, AP6906GH-HF

Keywords - 2SK829 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs