FRF9250R Specs and Replacement
Type Designator: FRF9250R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 242 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.315 Ohm
Package: TO254AA
FRF9250R substitution
FRF9250R datasheet
frf9250.pdf
FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 14A, -200V, RDS(on) = 0.315 TO-254AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒
Detailed specifications: FRF450D , FRF450H , FRF450R , FRF9150D , FRF9150H , FRF9150R , FRF9250D , FRF9250H , IRF530 , FRK150D , FRK150H , FRK150R , FRK160D , FRK160H , FRK160R , FRK250D , FRK250H .
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