All MOSFET. AP6980GN2-HF Datasheet

 

AP6980GN2-HF Datasheet and Replacement


   Type Designator: AP6980GN2-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN2X2
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AP6980GN2-HF Datasheet (PDF)

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AP6980GN2-HF

AP6980GN2-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Small Size & Lower Profile RDS(ON) 14m Halogen Free & RoHS Compliant Product ID 10.3AGSTop viewDD D SDescriptionDSAP6980 series are from Advanced Power innovated design andsilicon process technology to achieve th

 5.1. Size:602K  ape
ap6980gn2.pdf pdf_icon

AP6980GN2-HF

AP6980GN2-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Small Size & Lower Profile RDS(ON) 14m Halogen Free & RoHS Compliant Product ID 10.3AGSTop viewDD D SDescriptionDSAP6980 series are from Advanced Power innovated desig

 9.1. Size:51K  ape
ap6985gn2-hf.pdf pdf_icon

AP6980GN2-HF

AP6985GN2-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive D BVDSS -20V Small Size & Lower Profile RDS(ON) 26m Halogen Free & RoHS Compliant Product ID -8AGSTop viewDD D SDescriptionDSAP6985 series are from Advanced Power innovated desi

 9.2. Size:647K  ape
ap6982gn2.pdf pdf_icon

AP6980GN2-HF

AP6982GN2-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive D BVDSS 20V Small Size & Lower Profile RDS(ON) 12.5m Halogen Free & RoHS Compliant Product ID 11AGSTop viewDD D SDescriptionDSAP6982 series are from Advanced Power innovated design andsilicon process technology to achieve

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