AP70T03GP Specs and Replacement

Type Designator: AP70T03GP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-220

AP70T03GP substitution

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AP70T03GP datasheet

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 ap70t03gp ap70t03gs.pdf pdf_icon

AP70T03GP

AP70T03GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching Speed ID 60A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-263(S) designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒

 6.1. Size:121K  ape
 ap70t03gi.pdf pdf_icon

AP70T03GP

AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance ... See More ⇒

 6.2. Size:98K  ape
 ap70t03gh-hf ap70t03gj-hf.pdf pdf_icon

AP70T03GP

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device des... See More ⇒

 6.3. Size:98K  ape
 ap70t03gh.pdf pdf_icon

AP70T03GP

AP70T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, low on-resistanc... See More ⇒

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Detailed specifications: AP6983GN2-HF, AP70L02GH, AP70L02GJ, AP70L02GP, AP70L02GS, AP70T03GH, AP70T03GI, AP70T03GJ-HF, 2N7000, AP70T03GS, AP72T02GJ-HF, AP72T03GH, AP72T03GI-HF, AP72T03GJ, AP72T03GP-HF, AP72T12GP-HF, AP730P

Keywords - AP70T03GP MOSFET specs

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