All MOSFET. AP75N07GW Datasheet

 

AP75N07GW MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP75N07GW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 83 nC
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-3P

 AP75N07GW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP75N07GW Datasheet (PDF)

 ..1. Size:126K  ape
 ap75n07gw.pdf

AP75N07GW AP75N07GW

AP75N07GWRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 90AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

 6.1. Size:95K  ape
 ap75n07gi-hf.pdf

AP75N07GW AP75N07GW

AP75N07GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 43AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

 6.2. Size:152K  ape
 ap75n07gp.pdf

AP75N07GW AP75N07GW

AP75N07GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAP75N07 series are from Advanced Power innovated

 6.3. Size:192K  ape
 ap75n07gs p.pdf

AP75N07GW AP75N07GW

AP75N07GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, TO-220(P)DSruggedized device design,

 6.4. Size:165K  ape
 ap75n07gs.pdf

AP75N07GW AP75N07GW

AP75N07GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAP75N07 series are from Advanced Power innovated

 6.5. Size:97K  ape
 ap75n07gsp-hf.pdf

AP75N07GW AP75N07GW

AP75N07GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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