AP70T15GI-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP70T15GI-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 44.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 26
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 125
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 390
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
TO-220CFM
AP70T15GI-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP70T15GI-HF
Datasheet (PDF)
..1. Size:93K ape
ap70t15gi-hf.pdf 
AP70T15GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 26AG RoHS Compliant & Halogen-FreeSDescriptionAP70T15 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
5.1. Size:209K ape
ap70t15gi.pdf
AP70T15GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 26AG RoHS Compliant & Halogen-FreeSDescriptionAP70T15 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
6.1. Size:96K ape
ap70t15gp-hf.pdf
AP70T15GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 46AG RoHS Compliant & Halogen-FreeSDescriptionAP70T15 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
9.1. Size:121K ape
ap70t03gi.pdf
AP70T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance
9.2. Size:98K ape
ap70t03gh-hf ap70t03gj-hf.pdf
AP70T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedized device des
9.3. Size:98K ape
ap70t03gh.pdf
AP70T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedized device design, low on-resistanc
9.4. Size:98K ape
ap70t03gp ap70t03gs.pdf
AP70T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching Speed ID 60AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-263(S)designer with the best combination of fast switching,ruggedized device design, low on-re
9.5. Size:175K ape
ap70t03gjb.pdf
AP70T03GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 60AG RoHS Compliant & Halogen-FreeSDescriptionAP70T03 series are from Advanced Power innovated designand silicon process technology to achieve the lowest pos
9.6. Size:72K ape
ap70t03as ap70t03ap.pdf
AP70T03AS/PAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A GSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-263(S)designer with the best combination of fast switching,ruggedized dev
9.7. Size:71K ape
ap70t03ah ap70t03aj.pdf
AP70T03AH/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A GSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low o
9.8. Size:202K ape
ap70t03gj.pdf
AP70T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AG RoHS CompliantSDescriptionAP70T03 series are from Advanced Power innovated design and siliconGDS TO-252(H)process technology to achieve the lowest possible on-
9.9. Size:843K cn vbsemi
ap70t03gh.pdf
AP70T03GHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL
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