AP70T15GI-HF Specs and Replacement
Type Designator: AP70T15GI-HF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 44.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ -
Output Capacitance: 390 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO-220CFM
AP70T15GI-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP70T15GI-HF datasheet
..1. Size:93K ape
ap70t15gi-hf.pdf 
AP70T15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 26A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒
5.1. Size:209K ape
ap70t15gi.pdf 
AP70T15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 26A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒
6.1. Size:96K ape
ap70t15gp-hf.pdf 
AP70T15GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 46A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒
9.1. Size:121K ape
ap70t03gi.pdf 
AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance ... See More ⇒
9.2. Size:98K ape
ap70t03gh-hf ap70t03gj-hf.pdf 
AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device des... See More ⇒
9.3. Size:98K ape
ap70t03gh.pdf 
AP70T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, low on-resistanc... See More ⇒
9.4. Size:98K ape
ap70t03gp ap70t03gs.pdf 
AP70T03GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching Speed ID 60A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-263(S) designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒
9.5. Size:175K ape
ap70t03gjb.pdf 
AP70T03GJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 60A G RoHS Compliant & Halogen-Free S Description AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos... See More ⇒
9.6. Size:72K ape
ap70t03as ap70t03ap.pdf 
AP70T03AS/P Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G S Description G The Advanced Power MOSFETs from APEC provide the D S TO-263(S) designer with the best combination of fast switching, ruggedized dev... See More ⇒
9.7. Size:71K ape
ap70t03ah ap70t03aj.pdf 
AP70T03AH/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low o... See More ⇒
9.8. Size:202K ape
ap70t03gj.pdf 
AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description AP70T03 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology to achieve the lowest possible on-... See More ⇒
9.9. Size:843K cn vbsemi
ap70t03gh.pdf 
AP70T03GH www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOL... See More ⇒
Detailed specifications: AP73T03GH-HF, AP73T03GJ-HF, AP73T03GMT-HF, AP75N07AGP-HF, AP75N07GI-HF, AP75N07GP-HF, AP75N07GS-HF, AP75N07GW, AON7410, AP70T15GP-HF, AP72T02GH-HF, AP75T10AGP, AP75T10BGP-HF, AP75T10GI-HF, AP75T10GP-HF, AP75T10GS, AP75T12GI-HF
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