FRK160R MOSFET. Datasheet pdf. Equivalent
Type Designator: FRK160R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 900 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO204AE
FRK160R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRK160R Datasheet (PDF)
frk160.pdf
FRK160D, FRK160R,FRK160H50A, 100V, 0.040 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 50A, 100V, RDS(on) = 0.040TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRF9250D , FRF9250H , FRF9250R , FRK150D , FRK150H , FRK150R , FRK160D , FRK160H , HY1906P , FRK250D , FRK250H , FRK250R , FRK254D , FRK254H , FRK254R , FRK260D , FRK260H .
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