FRK160R Specs and Replacement
Type Designator: FRK160R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 900 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO204AE
FRK160R substitution
- MOSFET ⓘ Cross-Reference Search
FRK160R datasheet
frk160.pdf
FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 50A, 100V, RDS(on) = 0.040 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒
Detailed specifications: FRF9250D , FRF9250H , FRF9250R , FRK150D , FRK150H , FRK150R , FRK160D , FRK160H , TK10A60D , FRK250D , FRK250H , FRK250R , FRK254D , FRK254H , FRK254R , FRK260D , FRK260H .
Keywords - FRK160R MOSFET specs
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