FRK250D
MOSFET. Datasheet pdf. Equivalent
Type Designator: FRK250D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 27
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 600
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package: TO204AE
FRK250D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRK250D
Datasheet (PDF)
8.1. Size:48K intersil
frk250.pdf 
FRK250D, FRK250R,FRK250H27A, 200V, 0.100 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 27A, 200V, RDS(on) = 0.100TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
8.2. Size:212K inchange semiconductor
frk250.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FRK250DESCRIPTION27A, 200V, RDS(on) = 0.1Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIt is specially designed and processed toexhibit minimal characteristic changes to total dose and neutronexposures
9.1. Size:48K intersil
frk254.pdf
FRK254D, FRK254R,FRK254H20A, 250V, 0.170 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 20A, 250V, RDS(on) = 0.170TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRF9250H
, FRF9250R
, FRK150D
, FRK150H
, FRK150R
, FRK160D
, FRK160H
, FRK160R
, 20N50
, FRK250H
, FRK250R
, FRK254D
, FRK254H
, FRK254R
, FRK260D
, FRK260H
, FRK260R
.
