AP85T08GP-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP85T08GP-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 138
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 63
nC
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 670
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package:
TO-220
AP85T08GP-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP85T08GP-HF
Datasheet (PDF)
5.1. Size:97K ape
ap85t08gp ap85t08gs.pdf
AP85T08GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-GD
6.1. Size:97K ape
ap85t08gsp-hf.pdf
AP85T08GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switchin
6.2. Size:204K ape
ap85t08gs.pdf
AP85T08GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75AG Halogen Free & RoHS Compliant ProductSDescriptionAP85T08 series are from Advanced Power innovated designand silicon process technology to achieve t
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