All MOSFET. AP85T08GS-HF Datasheet

 

AP85T08GS-HF Datasheet and Replacement


   Type Designator: AP85T08GS-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-263
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AP85T08GS-HF Datasheet (PDF)

 5.1. Size:97K  ape
 ap85t08gp ap85t08gs.pdf pdf_icon

AP85T08GS-HF

AP85T08GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-GD

 5.2. Size:97K  ape
 ap85t08gsp-hf.pdf pdf_icon

AP85T08GS-HF

AP85T08GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switchin

 5.3. Size:204K  ape
 ap85t08gs.pdf pdf_icon

AP85T08GS-HF

AP85T08GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75AG Halogen Free & RoHS Compliant ProductSDescriptionAP85T08 series are from Advanced Power innovated designand silicon process technology to achieve t

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Keywords - AP85T08GS-HF MOSFET datasheet

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