AP9120GH-HF Specs and Replacement
Type Designator: AP9120GH-HF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO-252
AP9120GH-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP9120GH-HF datasheet
ap9120gh-hf ap9120gj-hf.pdf
AP9120GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -200V Simple Drive Requirement RDS(ON) 680m Fast Switching Characteristic ID -8A G RoHS Compliant & Halogen-Free S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount a... See More ⇒
ap9120gh.pdf
AP9120GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -200V Simple Drive Requirement RDS(ON) 680m Fast Switching Characteristic ID -8A G RoHS Compliant & Halogen-Free S Description G AP9120 series are from Advanced Power innovated design and silicon D S process technology to achiev... See More ⇒
ap9120agh-hf.pdf
AP9120AGH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -200V Fast Switching Characteristic RDS(ON) 680m RoHS Compliant & Halogen-Free ID -8A G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S best combination of fast switching, ruggedized device des... See More ⇒
Detailed specifications: AP90T03GH, AP90T03GI, AP90T03GJ, AP90T03GR, AP90T03GS-HF, AP90T03P, AP90T06GP-HF, AP9120AGH-HF, RU7088R, AP9120GJ-HF, AP92T03GH-HF, AP92T03GI-HF, AP92T03GJ-HF, AP92T03GP, AP92T03GP-HF, AP92T03GS-HF, AP92T12GI-HF
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