All MOSFET. AP9408AGI Datasheet

 

AP9408AGI MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP9408AGI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220CFM

 AP9408AGI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9408AGI Datasheet (PDF)

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 ap9408agi.pdf

AP9408AGI AP9408AGI

AP9408AGIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 10m Full Isolation Package ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

 6.1. Size:94K  ape
 ap9408agm-hf.pdf

AP9408AGI AP9408AGI

AP9408AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDD Simple Drive Requirement RDS(ON) 10mDD Fast Switching Characteristic ID 12.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of

 6.2. Size:143K  ape
 ap9408agh.pdf

AP9408AGI AP9408AGI

AP9408AGHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H)ruggedized device desi

 6.3. Size:169K  ape
 ap9408agm.pdf

AP9408AGI AP9408AGI

AP9408AGM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDD Simple Drive Requirement RDS(ON) 10mDD Fast Switching Characteristic ID 12.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9408A series are fro

 6.4. Size:145K  ape
 ap9408agp.pdf

AP9408AGI AP9408AGI

AP9408AGPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance a

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