All MOSFET. AP9466GM Datasheet

 

AP9466GM Datasheet and Replacement


   Type Designator: AP9466GM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: SO-8
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AP9466GM Datasheet (PDF)

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AP9466GM

AP9466GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 13.5mD Fast Switching Characteristic ID 10AGSSSSO-8DescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized devic

 7.1. Size:126K  ape
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AP9466GM

AP9466GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Single Drive Requirement RDS(ON) 13.5m Fast Switching Characteristics ID 40AGSDescriptionThe Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowGDon-r

 7.2. Size:234K  ape
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AP9466GM

AP9466GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Single Drive Requirement RDS(ON) 13.5m Fast Switching Characteristics ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,GDlow on-res

 9.1. Size:234K  ape
ap9467agh.pdf pdf_icon

AP9466GM

AP9467AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 43AG Halogen Free & RoHS CompliantSDescriptionAP9467A series are from Advanced Power innovated design andGDsilicon process technology to achieve the

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History: ALD1103DB | TK7P65W | CHM85A3PAGP | SQ9407EY-T1 | SFFX054Z

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