AP9563GJ-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9563GJ-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 26 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-251
AP9563GJ-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9563GJ-HF Datasheet (PDF)
ap9563gh-hf ap9563gj-hf.pdf
AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r
ap9563gj.pdf
AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r
ap9563gh.pdf
AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r
ap9563gm.pdf
AP9563GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID -6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9563 series are from Advanced Power innovated designand silicon process technology
ap9563gm-hf.pdf
AP9563GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID -6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa
ap9563gk.pdf
AP9563GKRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Lower Gate Charge RDS(ON) 40mS Fast Switching Characteristic ID -6.8ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistance and cost-G
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VS3817GA | IXFX160N30T | RT3K33M
History: VS3817GA | IXFX160N30T | RT3K33M
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