All MOSFET. 2SK3296-ZJ Datasheet

 

2SK3296-ZJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3296-ZJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1220 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-263

 2SK3296-ZJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3296-ZJ Datasheet (PDF)

 7.1. Size:422K  toshiba
2sk3296.pdf

2SK3296-ZJ 2SK3296-ZJ

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3296SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3296 is N-Channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3296 TO-220ABdesigned for low voltage high current applications such as2SK3296-S TO-262DC/DC converter wit

 8.1. Size:33K  sanyo
2sk3292.pdf

2SK3296-ZJ 2SK3296-ZJ

Ordering number:ENN6414N-Channel Silicon MOSFET2SK3292Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3292]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP

 8.2. Size:42K  sanyo
2sk3293.pdf

2SK3296-ZJ 2SK3296-ZJ

Ordering number:ENN6345N-Channel Silicon MOSFET2SK3293Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3293]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP

 8.3. Size:34K  sanyo
2sk3291.pdf

2SK3296-ZJ 2SK3296-ZJ

Ordering number:ENN6413N-Channel Silicon MOSFET2SK3291Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3291]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP

 8.4. Size:291K  renesas
2sk3298b.pdf

2SK3296-ZJ 2SK3296-ZJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:42K  renesas
2sk3290.pdf

2SK3296-ZJ 2SK3296-ZJ

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.6. Size:226K  renesas
2sk3298.pdf

2SK3296-ZJ 2SK3296-ZJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:81K  nec
2sk3299-s-zj.pdf

2SK3296-ZJ 2SK3296-ZJ

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3299SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3299 is N-Channel MOS FET device that featuresPART NUMBER PACKAGEa low gate charge and excellent switching characteristics,2SK3299 TO-220ABdesigned for high voltage applications such as switching power2SK3299-S TO-262supply, AC adapter.2S

 8.8. Size:46K  kexin
2sk3294.pdf

2SK3296-ZJ

SMD Type MOSFETMOS Field Effect Transistor2SK3294TO-263Unit: mmFeatures +0.24.57-0.2+0.11.27-0.1Gate voltage rating 30 VLow on-state resistanceRDS(on) = 160 m MAX. (VGS =10V, ID =10A)+0.10.1max1.27-0.1Low input capacitanceCiss =1500pFTYP. (VDS =10 V, VGS =0 V)+0.10.81-0.12.54Avalanche capability rated1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.2Bu

 8.9. Size:42K  kexin
2sk3295.pdf

2SK3296-ZJ 2SK3296-ZJ

SMD Type ICSMD Type TransistorsMOS Field Effect Transistor2SK3295TO-263Unit: mmFeatures+0.24.5 V drive available 4.57-0.21.27+0.1-0.1Low on-state resistanceRDS(on)1 =18 mMAX. (VGS =10V, ID =18A)Low gate chargeQG =16nCTYP. (ID =35A, VDD =16V, VGS =10V)0.1max1.27+0.1-0.1Built-in gate protection diode+0.1Surface mount device available 0.81-0.12.541Gate

 8.10. Size:851K  cn vbsemi
2sk3290.pdf

2SK3296-ZJ 2SK3296-ZJ

2SK3290www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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