AP9565GEH Specs and Replacement

Type Designator: AP9565GEH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO-252

AP9565GEH substitution

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AP9565GEH datasheet

 ..1. Size:131K  ape
 ap9565geh ap9565gej.pdf pdf_icon

AP9565GEH

AP9565GEH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D Lower On-resistance RDS(ON) 38m G Fast Switching Characteristic ID -24A S Description G D Advanced Power MOSFETs from APEC provide the S TO-252(H) designer with the best combination of fast switching, ruggedized device de... See More ⇒

 6.1. Size:89K  ape
 ap9565gem.pdf pdf_icon

AP9565GEH

AP9565GEM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Fast Switching Characteristic RDS(ON) 38m D RoHS Compliant ID -6.5A G S S S SO-8 D Description G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized de... See More ⇒

 8.1. Size:98K  ape
 ap9565agh-hf ap9565agj-hf.pdf pdf_icon

AP9565GEH

AP9565AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switchi... See More ⇒

 8.2. Size:96K  ape
 ap9565bgh-hf ap9565bgj-hf.pdf pdf_icon

AP9565GEH

AP9565BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D S best combination of fast switching,... See More ⇒

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Detailed specifications: 2SK3296-S, 2SK3296-ZK, 2SK3296-ZJ, AP9565AGH, AP9565AGJ, AP9565BGH-HF, AP9565BGJ-HF, AP9565BGM-HF, 2N7000, AP9565GEJ, AP9565GEM, AP9566GH, AP9566GM, AP9567GH-HF, AP9567GJ-HF, AP9567GM, AP9569GH-HF

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