AP9565GEH
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9565GEH
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 35.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038
Ohm
Package:
TO-252
AP9565GEH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9565GEH
Datasheet (PDF)
..1. Size:131K ape
ap9565geh ap9565gej.pdf 
AP9565GEH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Lower On-resistance RDS(ON) 38mG Fast Switching Characteristic ID -24ASDescriptionGDAdvanced Power MOSFETs from APEC provide theS TO-252(H)designer with the best combination of fast switching,ruggedized device de
6.1. Size:89K ape
ap9565gem.pdf
AP9565GEMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Fast Switching Characteristic RDS(ON) 38mD RoHS Compliant ID -6.5AGSSSSO-8DDescriptionGThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized de
8.1. Size:98K ape
ap9565agh-hf ap9565agj-hf.pdf
AP9565AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switchi
8.2. Size:96K ape
ap9565bgh-hf ap9565bgj-hf.pdf
AP9565BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSbest combination of fast switching,
8.3. Size:73K ape
ap9565bgm-hf-pre.pdf
AP9565BGM-HFPreliminaryAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 52mD Fast Switching Characteristic ID -5.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast swi
8.4. Size:98K ape
ap9565bgh j-hf.pdf
AP9565BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSbest combination of fast switching
8.5. Size:97K ape
ap9565agh ap9565agj.pdf
AP9565AGH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSdesigner with the best combination of fast switching, TO-252(H)ruggedized device de
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