All MOSFET. 2SK2333 Datasheet

 

2SK2333 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2333

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 530 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: FTO-220

2SK2333 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2333 Datasheet (PDF)

1.1. 2sk2333.pdf Size:346K _shindengen

2SK2333
2SK2333

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2333 Case : FTO-220 (Unit : mm) ( F6F70HVX2 ) 700V 6A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High

4.1. 2sk2339.pdf Size:35K _panasonic

2SK2333
2SK2333

Power F-MOS FETs 2SK2339 2SK2339 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 3.4 0.3 8.5 0.2 Low ON-resistance 6.0 0.5 1.0 0.1 No secondary breakdown Low-voltage drive Applications 1.5max. 1.1max. Non-contact relay Solenoid drive 0.8 0.1 0.5max. Motor drive 2.54 0.3 Control equipment 5.08 0.5 Switching mode regulator 1 2 3

 5.1. 2sk2359 2sk2360.pdf Size:90K _update

2SK2333
2SK2333

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2359/2SK2360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel (in millimeters) MOS Field Effect Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 ± 0.2 1.3 ± 0.2 10.0 FEATURES • Low On-Resistance 4 2SK2359: RDS(o

5.2. 2sk2320.pdf Size:62K _update

2SK2333
2SK2333



 5.3. 2sk2351.pdf Size:58K _update

2SK2333
2SK2333

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2351 DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V

5.4. 2sk2386.pdf Size:58K _update

2SK2333
2SK2333

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2386 DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V

 5.5. 2sk2361 2sk2362.pdf Size:85K _update

2SK2333
2SK2333

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2361/2SK2362 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor (in millimeter) designed for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2±0.2 1.5 • Low On-Resistance 4 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A)

5.6. 2sk2315.pdf Size:77K _update

2SK2333
2SK2333

 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to

5.7. 2sk2371 2sk2372.pdf Size:375K _update

2SK2333
2SK2333

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.8. 2sk2389.pdf Size:58K _update

2SK2333
2SK2333

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2389 DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage ±30 V

5.9. 2sk2388.pdf Size:54K _update

2SK2333
2SK2333

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2388 DESCRIPTION ·Drain Current ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0)

5.10. 2sk2365-z 2sk2366-z.pdf Size:90K _update

2SK2333
2SK2333

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel (in millimeters) MOS Field Effect Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 ± 0.2 1.3 ± 0.2 10.0 FEATURES • Low On-Resistance 2SK2365: RDS(on)

5.11. 2sk2328.pdf Size:195K _update

2SK2333
2SK2333

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.12. 2sk2329s-l.pdf Size:32K _update

2SK2333
2SK2333

2SK2329 L , 2SK2329 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 12 • Low drive current 3 • 2.5 V gate drive device can be driven from 1 3 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maxim

5.13. 2sk2314.pdf Size:426K _toshiba

2SK2333
2SK2333

2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2314 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 66 m? (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 100 V) Enhancement mode : Vt

5.14. 2sk2398.pdf Size:410K _toshiba

2SK2333
2SK2333

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2398 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 22 m? (typ.) High forward transfer admittance : |Y | = 27 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.5~3.0 V (V = 10 V, I = 1 mA) DS

5.15. 2sk2350.pdf Size:417K _toshiba

2SK2333
2SK2333

2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2350 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.26 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 8 S (typ.) fs Low leakage current : IDSS = 100 µA (max) (V = 200 V) DS Enhancemen

5.16. 2sk2391.pdf Size:420K _toshiba

2SK2333
2SK2333

2SK2391 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2391 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 66 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 µA (max) (V = 100 V) DS Enhancement-

5.17. 2sk2312.pdf Size:390K _toshiba

2SK2333
2SK2333

2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2312 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 13 m? (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 60 V) Enhancement mode : Vth

5.18. 2sk2381.pdf Size:393K _toshiba

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2SK2333

2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2381 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.56 ? (typ.) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3

5.19. 2sk2376.pdf Size:425K _toshiba

2SK2333
2SK2333

2SK2376 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-?-MOSV) 2SK2376 Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 13 m? (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 60 V) Enhancement mode : Vth =

5.20. 2sk2313.pdf Size:449K _toshiba

2SK2333
2SK2333

2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2313 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 8 m? (typ.) High forward transfer admittance : |Yfs| = 60 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 60 V) Enhancement mode : Vth

5.21. 2sk2399.pdf Size:423K _toshiba

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2SK2333

2SK2399 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2399 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.17 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = 100 µA (max) (V = 100 V) DS Enhancemen

5.22. 2sk2311.pdf Size:423K _toshiba

2SK2333
2SK2333

2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2311 Chopper Regulator, DC-DC Converter and Switching Unit: mm Regulator Applications 4 V gate drive Low drain-source ON resistance : R = 36 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 µA (max) (V = 60 V) DS Enhan

5.23. 2sk2382.pdf Size:411K _toshiba

2SK2333
2SK2333

2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2382 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.13 ? (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V

5.24. 2sk2352.pdf Size:499K _toshiba2

2SK2333
2SK2333

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

5.25. 2sk2394.pdf Size:111K _sanyo

2SK2333
2SK2333

Ordering number:EN4839A N-Channel Junction Silicon FET 2SK2394 Low-Noise HF Amplifier Applications Applications Package Dimensions AM tuner RF amplifier. unit:mm Low-noise amplifier. 2050A [2SK2394] Features 0.4 0.16 Large? yfs? . 3 Small Ciss. 0 to 0.1 Small-sized package permitting 2SK2394-applied sets to be made small slim. Ultralow noise figure. 1 0.95 2

5.26. 2sk2316.pdf Size:145K _sanyo

2SK2333
2SK2333

Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit: mm Ultrahigh-speed switching. 2062A-PCP Low-voltage drive (2.5V drive). [2SK2316] 1 : Gate 2 : Drain 3 : Source SANYO: PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings

5.27. 2sk2378.pdf Size:26K _sanyo

2SK2333
2SK2333

Ordering number : ENN5412B 2SK2378 N-channel Silicon MOSFET 2SK2378 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2378] Micaless package facilitaing mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source Specifications

5.28. 2sk2379.pdf Size:28K _sanyo

2SK2333
2SK2333

Ordering number : ENN5374A 2SK2379 N-Channel Silicon MOSFET 2SK2379 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2379] 4.5 Micalless package facilitaing mounting. 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 : Gate 1 2 3 2 : Drain 2.55 2.55 3 : Source Specifications

5.29. 2sk2395.pdf Size:96K _sanyo

2SK2333
2SK2333

Ordering number:ENN4840 N-Channel Junction Silicon FET 2SK2395 Low-Noise HF Amplifier Applications Applications Package Dimensions AM tuner RF amplifier. unit:mm Low-noise amplifier. 2034A [2SK2395] 2.2 4.0 Features Large | yfs |. Small Ciss. 0.4 0.5 Ultralow noise figure. 0.4 0.4 1 2 3 1 : Source 1.3 1.3 2 : Gate 3 : Drain 3.0 3.8nom SANYO : SPA Specifica

5.30. 2sk2348.pdf Size:55K _sanyo

2SK2333
2SK2333

Ordering number : EN5415A N-Channel Silicon MOSFET 2SK2348 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit: mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2348] 1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditio

5.31. 2sk2347.pdf Size:55K _sanyo

2SK2333
2SK2333

Ordering number : EN5424A N-Channel Silicon MOSFET 2SK2347 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit: mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2347] 1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditio

5.32. 2sk2349.pdf Size:54K _sanyo

2SK2333
2SK2333

Ordering number : EN5315A N-Channel Silicon MOSFET 2SK2349 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit: mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2349] 1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditio

5.33. rej03g1008 2sk2329lsds.pdf Size:102K _renesas

2SK2333
2SK2333

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.34. 2sk2329.pdf Size:89K _renesas

2SK2333
2SK2333

2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous: ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004Z

5.35. rej03g1010 2sk2393ds.pdf Size:113K _renesas

2SK2333
2SK2333

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.36. 2sk2357 2sk2358.pdf Size:55K _nec

2SK2333
2SK2333

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor (in millimeters) designed for high voltage switching applications. 4.5 ±0.2 10.0 ±0.3 3.2 ±0.2 FEATURES 2.7 ±0.2 • Low On-Resistance 2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID =

5.37. 2sk2369 2sk2370.pdf Size:86K _nec

2SK2333
2SK2333

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. φ 3.0 ± 0.2 FEATURES 4.7 MAX. 15.7 MAX 1.5 • Low On-Resistance 2SK2369: RDS(on) = 0.35 Ω (VGS = 10 V, ID = 1

5.38. 2sk2367 2sk2368.pdf Size:99K _nec

2SK2333
2SK2333

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor (in millimeter) designed for high voltage switching applications. 4.7 MAX. 15.7 MAX. 3.2±0.2 1.5 FEATURES 4 • Low On-Resistance 2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A)

5.39. 2sk2326.pdf Size:32K _panasonic

2SK2333
2SK2333

Power F-MOS FETs 2SK2326 2SK2326 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipment 1 2 3 7?

5.40. 2sk2323.pdf Size:23K _panasonic

2SK2333

Power F-MOS FETs 2SK758 2SK2323(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipment

5.41. 2sk2377.pdf Size:31K _panasonic

2SK2333
2SK2333

Power F-MOS FETs 2SK2377 2SK2377 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed 5.5 0.2 2.7 0.2 High-speed switching Low ON-resistance o3.1 0.1 No secondary breakdown Low-voltage drive Applications 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive Control equipment 2.54 0.2

5.42. 2sk2374.pdf Size:32K _panasonic

2SK2333
2SK2333

Power F-MOS FETs 2SK2374 2SK2374 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 o3.2 0.1 High-speed switching 5? 5? Low ON-resistance No secondary breakdown 5? 5? 4.0 Applications 5? 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5? Control equipment Switching mode

5.43. 2sk2340.pdf Size:31K _panasonic

2SK2333
2SK2333

Power F-MOS FETs 2SK2340 2SK2340 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipment 1 2 3 7?

5.44. 2sk2325.pdf Size:32K _panasonic

2SK2333
2SK2333

Power F-MOS FETs 2SK2325 2SK2325 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipment 1 2 3 7?

5.45. 2sk2383.pdf Size:32K _panasonic

2SK2333
2SK2333

Power F-MOS FETs 2SK2383 2SK2383 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 o3.2 0.1 High-speed switching 5? 5? Low ON-resistance No secondary breakdown 5? 5? 4.0 Applications 5? 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5? Control equipment Switching mode

5.46. 2sk2380.pdf Size:29K _panasonic

2SK2333
2SK2333

Silicon Junction FETs (Small Signal) 2SK2380 2SK2380 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency 1.6 0.15 For infrared sensor 0.4 0.8 0.1 0.4 Features 1 Low gate-source leakage current, IGSS 3 Small capacitance of Ciss, Coss, Crss Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Abs

5.47. 2sk2324.pdf Size:23K _panasonic

2SK2333

Power F-MOS FETs 2SK758 2SK2324(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching o3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipment

5.48. 2sk2342.pdf Size:24K _panasonic

2SK2333

Power F-MOS FETs 2SK2342 2SK2342 Silicon N-Channel MOS Unit : mm For motor drive 6.5 0.1 For DC-DC converter 5.3 0.1 4.35 0.1 3.0 0.1 Features Low ON-resistance RDS(on) High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25?C) Parameter Symbol Rating Unit 1 : Gate 1 2 3 2 : Drain Drain-Source breakdown voltage V

5.49. 2sk2327.pdf Size:32K _panasonic

2SK2333
2SK2333

Power F-MOS FETs 2SK2327 2SK2327 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 o3.2 0.1 High-speed switching 5? 5? Low ON-resistance No secondary breakdown 5? 5? 4.0 Applications 5? 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5? Control equipment Switching mode

5.50. 2sk2375.pdf Size:36K _panasonic

2SK2333
2SK2333

Power F-MOS FETs 2SK2375 2SK2375 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 o3.2 0.1 High-speed switching 5? 5? Low ON-resistance No secondary breakdown 5? 5? 4.0 Applications 5? 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5? Control equipment Switching mode

5.51. 2sk2397.pdf Size:161K _fuji

2SK2333
2SK2333

N-channel MOS-FET 2SK2397-01MR FAP-II Series 800V 2,3? 5A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent

5.52. 2sk2390.pdf Size:64K _hitachi

2SK2333
2SK2333

2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2390 Absolute Maximum Rating

5.53. 2sk2393.pdf Size:43K _hitachi

2SK2333
2SK2333

2SK2393 Silicon N-Channel MOS FET Application High voltage / High speed power switching Features Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2393 Absolute Maximum Ratings (Ta = 25C) Item Sym

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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