2SK2632LS MOSFET Datasheet: N-Ch, 800V, 2.5A. Full specification with pinout and replacement list

2SK2632LS Specs and Replacement

Type Designator: 2SK2632LS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm

Package: TO220FI-LS

2SK2632LS substitution

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2SK2632LS datasheet

..1. Size:49K sanyo
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Ordering number ENN5531B N-Channel Silicon MOSFET 2SK2632LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Low Qg. 2078B [2SK2632LS] 4.5 10.0 2.8 3.2 0.9 1.2 1.2 0.7 0.75 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO220FI-LS Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditio... See More ⇒

8.1. Size:60K sanyo
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8.2. Size:30K sanyo
2sk2631.pdf pdf_icon

Ordering number ENN6600 2SK2631 N-Channel Silicon MOSFET 2SK2631 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Smaller amount of total gate charge. 2083B [2SK2631] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK2631] 6.5 2.3 5.0 0... See More ⇒

8.3. Size:278K fuji
2sk2639-01.pdf pdf_icon

N-channel MOS-FET 2SK2639-01 FAP-IIS Series 450V 0,65 10A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteri... See More ⇒