AP9591GP-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9591GP-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 75
nC
trⓘ - Rise Time: 58
nS
Cossⓘ -
Output Capacitance: 750
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package:
TO-220
AP9591GP-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9591GP-HF
Datasheet (PDF)
..1. Size:117K ape
ap9591gp-hf.pdf
AP9591GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -100V Simple Drive Requirement RDS(ON) 21m Fast Switching Characteristic ID -80AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, r
6.1. Size:196K ape
ap9591gp.pdf
AP9591GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -100V Simple Drive Requirement RDS(ON) 21m Fast Switching Characteristic ID -80AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, r
7.1. Size:208K ape
ap9591gs.pdf
AP9591GSHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -100V Simple Drive Requirement RDS(ON) 24m Fast Switching Characteristic ID -73AG Halogen Free & RoHS Compliant ProductSDescriptionAP9591 series are from Advanced Power innovated design andsilicon process technology to achieve the lo
Datasheet: WPB4002
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