All MOSFET. AP95T07BGP-HF Datasheet

 

AP95T07BGP-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP95T07BGP-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 125 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 96 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-220

 AP95T07BGP-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP95T07BGP-HF Datasheet (PDF)

 ..1. Size:57K  ape
 ap95t07bgp-hf.pdf

AP95T07BGP-HF AP95T07BGP-HF

AP95T07BGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

 4.1. Size:149K  ape
 ap95t07bgp.pdf

AP95T07BGP-HF AP95T07BGP-HF

AP95T07BGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D BVDSS 75V Simple Drive Requirement RDS(ON) 5m Lower On-resistance RoHS Compliant & Halogen-Free ID 125AGSDescriptionAP95T07B series are from Advanced Power innovated designand silicon process technology to ac

 5.1. Size:95K  ape
 ap95t07bgs-hf.pdf

AP95T07BGP-HF AP95T07BGP-HF

AP95T07BGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresis

 7.1. Size:192K  ape
 ap95t07agp.pdf

AP95T07BGP-HF AP95T07BGP-HF

AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID3 170AGSDescriptionAP95T07A series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and f

 7.2. Size:145K  ape
 ap95t07gs.pdf

AP95T07BGP-HF AP95T07BGP-HF

AP95T07GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GDS TO-263(S)ruggedized device design,

 7.3. Size:96K  ape
 ap95t07gp-hf.pdf

AP95T07BGP-HF AP95T07BGP-HF

AP95T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedize

 7.4. Size:159K  ape
 ap95t07gp.pdf

AP95T07BGP-HF AP95T07BGP-HF

AP95T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP95T07 series are from Advanced Power innovated designand silicon process technology to achieve the lowest

 7.5. Size:94K  ape
 ap95t07agp-hf.pdf

AP95T07BGP-HF AP95T07BGP-HF

AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID 170AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resi

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