AP96T07GP-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP96T07GP-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 180 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 92 nC
Rise Time (tr): 90 nS
Drain-Source Capacitance (Cd): 1000 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: TO-220
AP96T07GP-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP96T07GP-HF Datasheet (PDF)
1.1. ap96t07gp-hf.pdf Size:94K _a-power
AP96T07GP-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 75V Ў Lower On-resistance RDS(ON) 4.2m? Ў Fast Switching Characteristic ID 120A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggediz
2.1. ap96t07gs-hf.pdf Size:94K _a-power
AP96T07GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 75V Ў Lower On-resistance RDS(ON) 4.5m? Ў Fast Switching Characteristic ID 120A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S TO-263(
3.1. ap96t07agp-hf.pdf Size:56K _a-power
AP96T07AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 75V ▼ Lower On-resistance RDS(ON) 4.25mΩ ▼ Fast Switching Characteristic ID 170A G ▼ RoHS Compliant & Halogen-Free S Description AP96T07A series are from Advanced Power innovated design and silicon process technology to achieve the
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