All MOSFET. AP9871GH-HF Datasheet

 

AP9871GH-HF Datasheet and Replacement


   Type Designator: AP9871GH-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: TO-252
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AP9871GH-HF Datasheet (PDF)

 ..1. Size:93K  ape
 ap9871gh-hf.pdf pdf_icon

AP9871GH-HF

AP9871GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 72m Fast Switching Characteristic ID 9.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DST

 9.1. Size:230K  ape
 ap9870gh.pdf pdf_icon

AP9871GH-HF

AP9870GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 42m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAP9870 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos

 9.2. Size:93K  ape
 ap9870gh-hf.pdf pdf_icon

AP9871GH-HF

AP9870GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 42m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DSTO

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History: BRCS90P03DP | WPM2014 | BUZ11S2FI | CSD18531Q5A | JCS12N65CT | BSC190N12NS3G | FCAB21490L1

Keywords - AP9871GH-HF MOSFET datasheet

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