AP9973GD MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9973GD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: PDIP-8
AP9973GD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9973GD Datasheet (PDF)
ap9973gd.pdf
AP9973GDPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low Gate Charge BVDSS 60VD2D1 Fast Switching Speed RDS(ON) 80mD1 PDIP-8 Package ID 3.9A RoHS CompliantG2S2PDIP-8G1S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ru
ap9973gp ap9973gs.pdf
AP9973GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14AGSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DSTO-263(S)ruggedized device design, low o
ap9973gh-hf ap9973gj-hf.pdf
AP9973GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)
ap9973gh.pdf
AP9973GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 80m Surface Mount Package ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAP9973 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible
ap9973gj.pdf
AP9973GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 80m Surface Mount Package ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAP9973 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible
ap9973gm.pdf
AP9973GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD2D2 Single Drive Requirement RDS(ON) 80mD1D1 Surface Mount Package ID 3.9AG2 RoHS CompliantS2G1SO-8 S1DescriptionD2The Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switchi
ap9973gi.pdf
AP9973GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 60VD Single Drive Requirement RDS(ON) 80m Full Isolation Package ID 14AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance
ap9973gj.pdf
AP9973GJwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secondar
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