All MOSFET. AP9977GM Datasheet

 

AP9977GM MOSFET. Datasheet pdf. Equivalent

Type Designator: AP9977GM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 3.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: SO-8

AP9977GM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9977GM Datasheet (PDF)

1.1. ap9977gm.pdf Size:212K _a-power

AP9977GM
AP9977GM

AP9977GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance BVDSS 60V D2 Ў Single Drive Requirement RDS(ON) 100m? D2 D1 Ў Surface Mount Package ID 3.3A D1 G2 S2 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ul

3.1. ap9977gh-hf.pdf Size:101K _a-power

AP9977GM
AP9977GM

AP9977GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge BVDSS 60V D Ў Single Drive Requirement RDS(ON) 100m? Ў Surface Mount Package ID 11A G Ў RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device de

3.2. ap9977gjv.pdf Size:207K _a-power

AP9977GM
AP9977GM

AP9977GJV Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge D BVDSS 60V ▼ Simple Drive Requirement RDS(ON) 100mΩ ▼ Fast Switching Performance ID 11A G ▼ RoHS Compliant & Halogen-Free S Description AP9977 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible

3.3. ap9977gj-hf.pdf Size:101K _a-power

AP9977GM
AP9977GM

AP9977GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge BVDSS 60V D Ў Single Drive Requirement RDS(ON) 100m? Ў Surface Mount Package ID 11A G Ў RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device de

Datasheet: AP9974GS-HF , AP9975GM-HF , AP9976GM , AP9976GP , AP9977AGH , AP9977AGM , AP9977GH-HF , AP9977GJ-HF , IRF1404 , AP9978AGP-HF , AP9978GP , AP9979GH-HF , AP9979GJ , AP9980GH , AP9980GJ , AP9980GM , AP9985GM .

 


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