AP9978AGP-HF Datasheet and Replacement
Type Designator: AP9978AGP-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 92.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 66 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 96 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-220
- MOSFET Cross-Reference Search
AP9978AGP-HF Datasheet (PDF)
ap9978agp-hf.pdf
AP9978AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 66AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedi
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ap9974gh-hf ap9974gj-hf.pdf
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ap9972agp.pdf
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ap9971agp ap9971ags.pdf
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ap9977agh-hf.pdf
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ap9970gp-hf.pdf
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ap9971gi-hf.pdf
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ap9972gs p-hf.pdf
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ap9970gi-hf.pdf
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ap9974gs p-hf.pdf
AP9974GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized d
ap9971gd.pdf
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ap9970agp-hf.pdf
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ap9972agr-hf.pdf
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ap9972gh.pdf
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ap9975gm.pdf
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ap9972agi.pdf
AP9972AGIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 16m Fast Switching Performance ID 32AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,Glow on-resistance and
ap9971agm-hf.pdf
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ap9971ags-hf.pdf
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ap9977agm.pdf
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ap9974agh-hf.pdf
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ap9979gh-hf.pdf
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ap9970gw-hf.pdf
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ap9970gk-hf.pdf
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ap9974agp-hf.pdf
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ap9974ags-hf.pdf
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ap9972gi-hf.pdf
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ap9973gm.pdf
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ap9977gm.pdf
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ap9979gj.pdf
AP9979GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 48m Surface Mount Package ID 20AGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer withDSTO-252(H)the best combination of fast switching, ruggedized device design,low on-r
ap9973gi.pdf
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ap9971gi.pdf
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ap9972agp-hf.pdf
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ap9972gi.pdf
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ap9970gw.pdf
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ap9977gm-hf.pdf
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ap9974.pdf
SMD Type MOSFETN-Channel MOSFETAP9974TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features VDS (V) = 60V ID = 68 A (VGS = 10V)0.127+0.10.80-0.1 RDS(ON) 12m (VGS = 10V) max RDS(ON) 15m (VGS = 4.5V) Single Drive Requirement+ 0.12.3 0.60- 0.11 Gate+0.154.60 -0.152 Drain3 SourceDGS
ap9974gs.pdf
AP9974GSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source
ap9971gm.pdf
AP9971GMwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel
ap9971gh.pdf
AP9971GHwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise note
ap9971gj.pdf
AP9971GJwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secondar
ap9973gj.pdf
AP9973GJwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secondar
ap9971gi.pdf
AP9971GIwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single
ap9971gp.pdf
AP9971GPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: RJK0346DPA | 3415 | 3080K | 30N50 | RFP8P10 | BUK7Y08-40B | AP9971AGH-HF
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History: RJK0346DPA | 3415 | 3080K | 30N50 | RFP8P10 | BUK7Y08-40B | AP9971AGH-HF
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