All MOSFET. FRL430R Datasheet

 

FRL430R Datasheet and Replacement


   Type Designator: FRL430R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 58 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO205AF
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FRL430R Datasheet (PDF)

 8.1. Size:53K  intersil
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FRL430R

FRL430D, FRL430R,FRL430H2A, 500V, 2.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 2A, 500V, RDS(on) = 2.50TO-205AF Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

Datasheet: FRL230H , FRL230R , FRL230R4 , FRL234D , FRL234H , FRL234R , FRL430D , FRL430H , AO4468 , FRL9130D , FRL9130H , FRL9130R , FRL9230D , FRL9230H , FRL9230R , FRM130D , FRM130H .

History: GSM3030 | IRF6612

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