AP9997AGH-HF Datasheet and Replacement
Type Designator: AP9997AGH-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 34.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 8.8
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 13.5
nS
Cossⓘ -
Output Capacitance: 55
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.185
Ohm
Package:
TO-252
AP9997AGH-HF substitution
-
MOSFET ⓘ Cross-Reference Search
AP9997AGH-HF Datasheet (PDF)
..1. Size:94K ape
ap9997agh-hf.pdf 
AP9997AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 120V Lower Gate Charge RDS(ON) 185m Fast Switching Characteristic ID 8.8AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S TO-252(H)r
5.1. Size:185K ape
ap9997agh.pdf 
AP9997AGH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower Gate Charge RDS(ON) 185m Fast Switching Characteristic ID 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP9997A series are from Advanced Power innovat
8.1. Size:182K ape
ap9997gm.pdf 
AP9997GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95VD2D2 Single Drive Requirement RDS(ON) 110mD1D1 Surface Mount Package ID 3AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,rugge
8.2. Size:97K ape
ap9997gh-hf ap9997gj-hf.pdf 
AP9997GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11AG RoHS Compliant & Halogen-FreeSDescriptionGDAdvanced Power MOSFETs from APEC provide theS TO-252(H)designer with the best combination of fast
8.3. Size:94K ape
ap9997gk-hf.pdf 
AP9997GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Lower Gate Charge RDS(ON) 120mS Fast Switching Characteristic ID 3.2AD Halogen Free & RoHS Compliant ProductSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
8.4. Size:123K ape
ap9997bghj-hf.pdf 
AP9997BGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 145m Fast Switching Characteristic ID 9.3AG Halogen Free & RoHS Compliant ProductSDescriptionAP9997B series are from Advanced Power innovated design and siliconGDprocess technology to
8.5. Size:94K ape
ap9997gk.pdf 
AP9997GKRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 3.2ASDSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resistance and co
8.6. Size:93K ape
ap9997gp-hf.pdf 
AP9997GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resista
8.7. Size:144K ape
ap9997gp.pdf 
AP9997GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistan
8.8. Size:812K cn vbsemi
ap9997gk.pdf 
AP9997GKwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET ABS
8.9. Size:1435K cn vbsemi
ap9997gh.pdf 
AP9997GHwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
8.10. Size:286K inchange semiconductor
ap9997gh.pdf 
isc N-Channel MOSFET Transistor AP9997GHFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.12(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
Datasheet: AP9992AGI-HF
, AP9992AGP-HF
, AP9992GI-HF
, AP9992GP-A-HF
, AP9992GP-HF
, AP9992GR-HF
, AP9995GH-HF
, AP9995GJ-HF
, 2SK3568
, AP9997BGH-HF
, AP9997BGJ-HF
, AP9997GH-HF
, AP9997GJ-HF
, AP9997GK
, AP9997GM
, AP9997GP-HF
, AP9998GH-HF
.
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