AP99T06AGP-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP99T06AGP-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 138.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 135
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 110
nC
trⓘ - Rise Time: 57
nS
Cossⓘ -
Output Capacitance: 820
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042
Ohm
Package:
TO-220
AP99T06AGP-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP99T06AGP-HF
Datasheet (PDF)
..1. Size:94K ape
ap99t06agp-hf.pdf
AP99T06AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 135AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz
5.1. Size:59K ape
ap99t06agi-hf.pdf
AP99T06AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 76AG RoHS Compliant & Halogen-FreeSDescriptionAP99T06A series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
7.1. Size:95K ape
ap99t06gp-hf.pdf
AP99T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 120AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged
8.1. Size:94K ape
ap99t03gp-hf.pdf
AP99T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G
8.2. Size:91K ape
ap99t03gs-hf.pdf
AP99T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve the
8.3. Size:206K ape
ap99t03gs.pdf
AP99T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve th
8.4. Size:195K ape
ap99t03gp.pdf
AP99T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve th
8.5. Size:91K ape
ap99t03gr-hf.pdf
AP99T03GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated design andsilicon process technology to achieve the
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