AP9T18GH PDF and Equivalents Search

 

AP9T18GH Specs and Replacement

Type Designator: AP9T18GH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 280 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO-252

AP9T18GH substitution

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AP9T18GH datasheet

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ap9t18gh ap9t18gj.pdf pdf_icon

AP9T18GH

AP9T18GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 38A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H) ruggedized device design, ultra ... See More ⇒

 0.1. Size:98K  ape
ap9t18gh-hf.pdf pdf_icon

AP9T18GH

AP9T18GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38A G RoHS Compliant & Halogen-Free S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po... See More ⇒

 7.1. Size:126K  ape
ap9t18geh ap9t18gej.pdf pdf_icon

AP9T18GH

AP9T18GEH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D G-S Diode embedded BVDSS 20V G Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) rugg... See More ⇒

 9.1. Size:60K  ape
ap9t16agh-hf.pdf pdf_icon

AP9T18GH

AP9T16AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fas... See More ⇒

Detailed specifications: AP99T06GP-HF , AP9T15GH , AP9T15GJ , AP9T16AGH-HF , AP9T16GH , AP9T16GJ , AP9T18GEH , AP9T18GEJ , IRF1407 , AP9T18GJ , AP9T19GJ , APA2N70K-HF , APS04N60H-HF , IRF830I-HF , IRF840I , 2SK3467 , 2SK3505 .

Keywords - AP9T18GH MOSFET specs

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