All MOSFET. AP9T18GJ Datasheet

 

AP9T18GJ Datasheet and Replacement


   Type Designator: AP9T18GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-251
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AP9T18GJ Datasheet (PDF)

 ..1. Size:212K  ape
 ap9t18gh ap9t18gj.pdf pdf_icon

AP9T18GJ

AP9T18GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 38AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, ultra

 7.1. Size:98K  ape
 ap9t18gh-hf.pdf pdf_icon

AP9T18GJ

AP9T18GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38AG RoHS Compliant & Halogen-FreeSDescriptionAP9T18 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest po

 7.2. Size:126K  ape
 ap9t18geh ap9t18gej.pdf pdf_icon

AP9T18GJ

AP9T18GEH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD G-S Diode embedded BVDSS 20VG Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant SDescriptionThe Advanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast switching,TO-252(H)rugg

 9.1. Size:60K  ape
 ap9t16agh-hf.pdf pdf_icon

AP9T18GJ

AP9T16AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDSTO-252(H)best combination of fas

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP9T18GEJ | HM3207

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