2SK4101LS MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK4101LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28.5 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 136 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220FI

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2SK4101LS Datasheet (PDF)

..1. Size:45K sanyo
2sk4101ls.pdf pdf_icon

Ordering number : ENA0745 2SK4101LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4101LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specification

..2. Size:279K inchange semiconductor
2sk4101ls.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK4101LSFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

8.1. Size:206K toshiba
2sk4104.pdf pdf_icon

2SK4104 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4104 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

8.2. Size:175K toshiba
2sk4106.pdf pdf_icon

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

8.3. Size:199K toshiba
2sk4105.pdf pdf_icon

2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4105 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

8.4. Size:281K toshiba
2sk4108.pdf pdf_icon

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4108 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 21 (typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

8.5. Size:296K toshiba
2sk4103.pdf pdf_icon

2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK4103 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu

8.6. Size:239K toshiba
2sk4107.pdf pdf_icon

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4107 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 33 (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

8.7. Size:97K sanyo
2sk4100ls.pdf pdf_icon

www.DataSheet4U.comOrdering number : ENA0778 2SK4100LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4100LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guaran

8.8. Size:50K hitachi
2sk410.pdf pdf_icon

2SK410Silicon N-Channel MOS FETApplicationHF/VHF power amplifierFeatures High breakdown voltage You can decrease handling current. Included gate protection diode No secondarybreakdown Wide area of safe operation Simple bias circuitry No thermal runawayOutline2SK410Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to sourc

8.9. Size:279K inchange semiconductor
2sk4100ls.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK4100LSFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.35(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.10. Size:286K inchange semiconductor
2sk4108.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK4108FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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2SK4101LS MOSFET. Datasheet pdf. Equivalent

2SK4101LS Datasheet (PDF)

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