FRL9230H Datasheet and Replacement
Type Designator: FRL9230H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO205AF
FRL9230H substitution
FRL9230H Datasheet (PDF)
frl9230.pdf
FRL9230D, FRL9230R,FRL9230H3A, -200V, 1.30 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 3A, -200V, RDS(on) = 1.30TO-205AF Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRL234R , FRL430D , FRL430H , FRL430R , FRL9130D , FRL9130H , FRL9130R , FRL9230D , AO4468 , FRL9230R , FRM130D , FRM130H , FRM130R , FRM140D , FRM140H , FRM140R , FRM230D .
History: PNM8P30V12 | SQJA06EP | PNM23T703E0-2
Keywords - FRL9230H MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: PNM8P30V12 | SQJA06EP | PNM23T703E0-2
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