FRL9230H Specs and Replacement

Type Designator: FRL9230H

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO205AF

FRL9230H substitution

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FRL9230H datasheet

 7.1. Size:47K  intersil
 frl9230.pdf pdf_icon

FRL9230H

FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 3A, -200V, RDS(on) = 1.30 TO-205AF Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)... See More ⇒

Detailed specifications: FRL234R, FRL430D, FRL430H, FRL430R, FRL9130D, FRL9130H, FRL9130R, FRL9230D, AO4468, FRL9230R, FRM130D, FRM130H, FRM130R, FRM140D, FRM140H, FRM140R, FRM230D

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