All MOSFET. 2SK3637 Datasheet

 

2SK3637 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3637

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 125 nS

Drain-Source Capacitance (Cd): 750 pF

Maximum Drain-Source On-State Resistance (Rds): 0.029 Ohm

Package: TOP-3E-A1

2SK3637 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK3637 PDF doc:

1.1. 2sk3637.pdf Size:90K _panasonic

2SK3637
2SK3637

www.DataSheet4U.com Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm 15.5±0.5 3.0±0.3 ? 3.2±0.1 5? For PDP/For high-speed switching 5? ¦ Features • Low on-resistance, low Qg 5? • High avalanche resistance 5? (4.0) 5? 2.0±0.2 ¦ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 Parameter Symbol Rating Unit 5.45±0.3 Drain-source surrender voltage VDS

4.1. 2sk363.pdf Size:173K _toshiba

2SK3637
2SK3637

2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = -40 V High input impedance: I = -1.0 nA (max) (V = -30 V) GSS GS Low R : R = 20 ? (typ.) (I = 15 mA) DS (ON) DS (ON) DSS Maximum Ratings (Ta = = 25C) = = Charac

4.2. 2sk3633.pdf Size:239K _toshiba

2SK3637
2SK3637

2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOS IV) 2SK3633 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 ? (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 640 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (T

4.3. 2sk113_2sk152_2sk363_2sj44_ifn113_ifn152_ifn363_ifp44.pdf Size:88K _interfet

2SK3637

Databook.fxp 1/13/99 2:09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V – 50 – 20 – 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS (– 20 V) (–10 V) (– 30 V) (

Datasheet: 2SK2352 , 2SK2655-01R , 2SK2872-01MR , 2SK3430 , 2SK3430-S , 2SK3430-Z , 2SK3523-01R , 2SK3525-01MR , IRF540N , 2SK4096LS , BUZ334 , 3N161 , 3N165 , 3N166 , 3SK199 , 3SK207 , 3SK225 .

 


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