2N3822 Datasheet and Replacement
Type Designator: 2N3822
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 0.01 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Package: TO-72 TO-206AF
2N3822 substitution
2N3822 Datasheet (PDF)
2n3821 2n3822 2n3824.pdf

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2n3821 2n3822.pdf

Databook.fxp 1/13/99 2:09 PM Page B-301/99 B-32N3821, 2N3822N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C VHF AmplifiersReverse Gate Source & Reverse Gate Drain Voltage 50 V Small Signal AmplifiersContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mWPower Derating 2mW/CAt 25C free air temperat
2n3821 2n3822 2n3823.pdf

TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices Qualified Level JANTX 2N3821 2N3822 2N3823 JANTXV MAXIMUM RATINGS 2N3821 Parameters / Test Conditions Symbol 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage V 50 30 V DSDrain-Gate Voltage V 50 30 V DGGate Current I 10 mA GF TO-72* Power Dissipatio
2n3820.pdf

2N3820P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89.TO-9211. Drain 2. Gate 3. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage -20 VVG
Datasheet: 2N3684 , 2N3685 , 2N3686 , 2N3687 , 2N3796 , 2N3797 , 2N3820 , 2N3821 , IRF9540N , 2N3823 , 2N3921 , 2N3922 , 2N3954 , 2N3955 , 2N3956 , 2N5018 , 2N5019 .
History: IPP120N10S4-05 | 2SK1477 | BUK6507-75C | 2SJ527S | RHK005N03FRA | 2SJ555 | 2SK3541
Keywords - 2N3822 MOSFET datasheet
2N3822 cross reference
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History: IPP120N10S4-05 | 2SK1477 | BUK6507-75C | 2SJ527S | RHK005N03FRA | 2SJ555 | 2SK3541



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