2N3822 Datasheet. Specs and Replacement
Type Designator: 2N3822 📄📄
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 0.01 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
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2N3822 datasheet
2n3821 2n3822 2n3824.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2n3821 2n3822.pdf
Databook.fxp 1/13/99 2 09 PM Page B-3 01/99 B-3 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 50 V Small Signal Amplifiers Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2mW/ C At 25 C free air temperat... See More ⇒
2n3821 2n3822 2n3823.pdf
TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices Qualified Level JANTX 2N3821 2N3822 2N3823 JANTXV MAXIMUM RATINGS 2N3821 Parameters / Test Conditions Symbol 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage V 50 30 V DS Drain-Gate Voltage V 50 30 V DG Gate Current I 10 mA GF TO-72* Power Dissipatio... See More ⇒
2n3820.pdf
2N3820 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage -20 V VG... See More ⇒
Detailed specifications: 2N3684, 2N3685, 2N3686, 2N3687, 2N3796, 2N3797, 2N3820, 2N3821, IRLB4132, 2N3823, 2N3921, 2N3922, 2N3954, 2N3955, 2N3956, 2N5018, 2N5019
Keywords - 2N3822 MOSFET specs
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