2N3822 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N3822
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.3 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 4 V
Maximum Drain Current |Id|: 0.01 A
Maximum Junction Temperature (Tj): 200 °C
Package: TO-72, TO-206AF
2N3822 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N3822 Datasheet (PDF)
1.1. 2n3821 2n3822 2n3824.pdf 
Size:88K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
1.2. 2n3821 2n3822.pdf Size:94K _interfet
Databook.fxp 1/13/99 2:09 PM Page B-3 01/99 B-3 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 50 V ? Small Signal Amplifiers Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2mW/C At 25C free air temperature: 2N382
1.3. 2n3821 2n3822 2n3823.pdf Size:54K _microsemi
TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices Qualified Level JANTX 2N3821 2N3822 2N3823 JANTXV MAXIMUM RATINGS 2N3821 Parameters / Test Conditions Symbol 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage V 50 30 V DS Drain-Gate Voltage V 50 30 V DG Gate Current I 10 mA GF TO-72* Power Dissipation T
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
