2N3822 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N3822
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.3 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 4 V
Maximum Drain Current |Id|: 0.01 A
Maximum Junction Temperature (Tj): 200 °C
Package: TO-72_TO-206AF
2N3822 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N3822 Datasheet (PDF)
1.1. 2n3821 2n3822 2n3824.pdf 
Size:88K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
1.2. 2n3821 2n3822.pdf Size:94K _interfet
Databook.fxp 1/13/99 2:09 PM Page B-3 01/99 B-3 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 50 V ? Small Signal Amplifiers Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2mW/C At 25C free air temperature: 2N382
1.3. 2n3821 2n3822 2n3823.pdf Size:54K _microsemi
TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices Qualified Level JANTX 2N3821 2N3822 2N3823 JANTXV MAXIMUM RATINGS 2N3821 Parameters / Test Conditions Symbol 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage V 50 30 V DS Drain-Gate Voltage V 50 30 V DG Gate Current I 10 mA GF TO-72* Power Dissipation T
Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .
