FRM230D Specs and Replacement
Type Designator: FRM230D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO204AA
FRM230D substitution
- MOSFET ⓘ Cross-Reference Search
FRM230D datasheet
frm230.pdf
FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 8A, 200V, RDS(on) = 0.50 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒
frm230.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor FRM230 FEATURES 8A, 200V, RDS(on) = 0.5 Second Generation Rad Hard MOSFET Results From New Design Concepts Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. ... See More ⇒
frm234.pdf
FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 7A, 250V, RDS(on) = 0.70 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒
Detailed specifications: FRL9230H, FRL9230R, FRM130D, FRM130H, FRM130R, FRM140D, FRM140H, FRM140R, IRF540, FRM230H, FRM230R, FRM234D, FRM234H, FRM234R, FRM240D, FRM240H, FRM240R
Keywords - FRM230D MOSFET specs
FRM230D cross reference
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