All MOSFET. FRM230R Datasheet

 

FRM230R Datasheet and Replacement


   Type Designator: FRM230R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 130 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO204AA
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FRM230R Datasheet (PDF)

 8.1. Size:59K  intersil
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FRM230R

FRM230D, FRM230R,FRM230H8A, 200V, 0.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 8A, 200V, RDS(on) = 0.50TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

 8.2. Size:229K  inchange semiconductor
frm230.pdf pdf_icon

FRM230R

INCHANGE Semiconductorisc N-Channel Mosfet Transistor FRM230FEATURES8A, 200V, RDS(on) = 0.5Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is specially designed and processed to exhibit minimalcharacteristic changes to total dose and neutron exposures.

 9.1. Size:48K  intersil
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FRM230R

FRM234D, FRM234R,FRM234H7A, 250V, 0.70 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 7A, 250V, RDS(on) = 0.70TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

Datasheet: FRM130D , FRM130H , FRM130R , FRM140D , FRM140H , FRM140R , FRM230D , FRM230H , IRFP460 , FRM234D , FRM234H , FRM234R , FRM240D , FRM240H , FRM240R , FRM244D , FRM244H .

History: IXFM20N60 | SVF2N60T | STD3NK50Z | SVS11N65DD2TR | LSD65R105HF | DH100P40E | NVMFD5483NLT1G

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