2N4857 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N4857
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id|ⓘ - Maximum Drain Current: 0.02 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
   Package: TO-18 TO-206AA

2N4857 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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