2N5114 Datasheet and Replacement
Type Designator: 2N5114
Type of Transistor: JFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.09 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
tr ⓘ - Rise Time: 10 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 75 Ohm
Package: TO-18
2N5114 substitution
2N5114 Datasheet (PDF)
2n5114 2n5115 2n5116.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5114 2n5115 2n5116.pdf

P-Channel JFET SwitchCORPORATION2N5114 2N5116GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)AIdeal for inverting switching or "Virtual Gnd" switching intoinverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30Vsignals can be handled using only +5V logic (TTL or CMOS). G
mx2n5114 mx2n5115 mx2n5116.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C
2n5114ub 2n5114ube3 2n5115ub 2n5115ube3 2n5116ub 2n5116ube3.pdf

2N5114UB thru 2N5116UB Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For t
Datasheet: 2N4867 , 2N4868 , 2N4869 , 2N4867A , 2N4868A , 2N4869A , 2N5020 , 2N5021 , IRF640 , 2N5115 , 2N5116 , 2N5196 , 2N5197 , 2N5198 , 2N5199 , 2N5245 , 2N5246 .
History: IRF7739L1
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History: IRF7739L1



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