All MOSFET. 2N5114 Datasheet

 

2N5114 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N5114

Type of Transistor: JFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 0.09 A

Maximum Junction Temperature (Tj): 200 °C

Rise Time (tr): 10 nS

Maximum Drain-Source On-State Resistance (Rds): 75 Ohm

Package: TO-18

2N5114 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N5114 Datasheet (PDF)

1.1. 2n5114 2n5115 2n5116.pdf Size:85K _central

2N5114

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.2. 2n5114 2n5115 2n5116.pdf Size:33K _calogic

2N5114
2N5114

P-Channel JFET Switch CORPORATION 2N5114 2N5116 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V signals can be handled using only +5V logic (TTL or CMOS). Gate Cu

 5.1. 2n5117 2n5118 2n5119.pdf Size:64K _intersil

2N5114
2N5114

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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