All MOSFET. 2N5461 Datasheet


2N5461 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N5461

Type of Transistor: JFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 4.5 V

Maximum Drain Current |Id|: 0.009 A

Maximum Junction Temperature (Tj): 150 °C

Package: TO-92

2N5461 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2N5461 Datasheet (PDF)

1.1. 2n5460 2n5461 2n5462.pdf Size:116K _motorola


MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5460/D JFET Amplifiers 2N5460 PChannel Depletion 2 DRAIN thru 2N5462 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit DrainGate Voltage VDG 40 Vdc Reverse GateSource Voltage VGSR 40 Vdc 1 Forward Gate Current IG(f) 10 mAdc 2 3 Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C

1.2. 2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf Size:114K _fairchild_semi


2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E / 61U / 61V are interchangeable D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25C unless otherwise noted - Sym

 1.3. 2n5460 sst5460 2n5461 sst5461 2n5462 sst5462.pdf Size:48K _vishay


2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 SST5460 2N5461 SST5461 2N5462 SST5462 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 40 1 1 2N/SST5461 1 to 7.5 40 1.5 2 2N/SST5462 1.8 to 9 40 2 4 FEATURES BENEFITS APPLICATIONS D High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage Amplifie

1.4. 2n5460 2n5461 2n5462.pdf Size:62K _central


145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

 1.5. 2n5460 2n5461 2n5462.pdf Size:60K _onsemi


2N5460, 2N5461, 2N5462 JFET Amplifier P-Channel - Depletion Features Pb-Free Packages are Available* 2 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain - Gate Voltage VDG 40 Vdc GATE Reverse Gate - Source Voltage VGSR 40 Vdc Forward Gate Current IG(f) 10 mAdc 1 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Junction Temp

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


Back to Top