FRM240H Specs and Replacement

Type Designator: FRM240H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 264 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO204AA

FRM240H substitution

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FRM240H datasheet

 8.1. Size:53K  intersil
 frm240.pdf pdf_icon

FRM240H

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 8.2. Size:229K  inchange semiconductor
 frm240.pdf pdf_icon

FRM240H

INCHANGE Semiconductor isc N-Channel Mosfet Transistor FRM240 FEATURES 16A, 200V, RDS(on) = 0.24 Second Generation Rad Hard MOSFET Results From New Design Concepts Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures... See More ⇒

 9.1. Size:47K  intersil
 frm244.pdf pdf_icon

FRM240H

FRM244D, FRM244R, FRM244H 12A, 250V, 0.400 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 12A, 250V, RDS(on) = 0.400 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒

Detailed specifications: FRM140R, FRM230D, FRM230H, FRM230R, FRM234D, FRM234H, FRM234R, FRM240D, IRFB4110, FRM240R, FRM244D, FRM244H, FRM244R, FRM430D, FRM430H, FRM430R, FRM440D

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