FRM240H
MOSFET. Datasheet pdf. Equivalent
Type Designator: FRM240H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 264
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24
Ohm
Package:
TO204AA
FRM240H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRM240H
Datasheet (PDF)
8.1. Size:53K intersil
frm240.pdf 
FRM240D, FRM240R,FRM240H16A, 200V, 0.24 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 16A, 200V, RDS(on) = 0.24TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
8.2. Size:229K inchange semiconductor
frm240.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor FRM240FEATURES16A, 200V, RDS(on) = 0.24Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is specially designed and processed toexhibit minimal characteristic changes to total dose and neutronexposures
9.1. Size:47K intersil
frm244.pdf
FRM244D, FRM244R,FRM244H12A, 250V, 0.400 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 12A, 250V, RDS(on) = 0.400TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRM140R
, FRM230D
, FRM230H
, FRM230R
, FRM234D
, FRM234H
, FRM234R
, FRM240D
, IRFP260N
, FRM240R
, FRM244D
, FRM244H
, FRM244R
, FRM430D
, FRM430H
, FRM430R
, FRM440D
.
