FRM240H Datasheet and Replacement
Type Designator: FRM240H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 264 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO204AA
FRM240H substitution
FRM240H Datasheet (PDF)
frm240.pdf
FRM240D, FRM240R,FRM240H16A, 200V, 0.24 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 16A, 200V, RDS(on) = 0.24TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
frm240.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor FRM240FEATURES16A, 200V, RDS(on) = 0.24Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is specially designed and processed toexhibit minimal characteristic changes to total dose and neutronexposures
frm244.pdf
FRM244D, FRM244R,FRM244H12A, 250V, 0.400 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 12A, 250V, RDS(on) = 0.400TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRM140R , FRM230D , FRM230H , FRM230R , FRM234D , FRM234H , FRM234R , FRM240D , IRFB4110 , FRM240R , FRM244D , FRM244H , FRM244R , FRM430D , FRM430H , FRM430R , FRM440D .
History: NCE65T130T
Keywords - FRM240H MOSFET datasheet
FRM240H cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: NCE65T130T
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