2N5564 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N5564
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 3 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: TO-71
2N5564 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N5564 Datasheet (PDF)
2n5564 2n5565 2n5566.pdf
2N5564/5565/5566Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV)2N5564 -0.5 to -3 -40 7.5 -3 52N5565 -0.5 to -3 -40 7.5 -3 102N5566 -0.5 to -3 -40 7.5 -3 20FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: RU30120R
History: RU30120R
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918