All MOSFET. 2N5950 Datasheet

 

2N5950 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N5950

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.36 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 5 V

Maximum Drain Current |Id|: 0.015 A

Maximum Junction Temperature (Tj): 150 °C

Package: TO-92-18R

2N5950 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N5950 Datasheet (PDF)

1.1. 2n5950.pdf Size:97K _fairchild_semi

2N5950
2N5950

September 2007 2N5950 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Cu

1.2. 2n5949 2n5950 2n5951 2n5952 2n5953.pdf Size:71K _central

2N5950

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

 5.1. 2n5952.pdf Size:25K _fairchild_semi

2N5950
2N5950

2N5952 N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA T

5.2. 2n5951.pdf Size:100K _fairchild_semi

2N5950
2N5950

September 2007 2N5951 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Cu

 5.3. 2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf Size:114K _central

2N5950
2N5950

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.4. 2n5956.pdf Size:10K _semelab

2N5950

2N5956 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 45V IC = 6A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifica

 5.5. 2n5954 2n5955 2n5956.pdf Size:131K _jmnic

2N5950
2N5950

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION ·With TO-66 package ·Low collector-emitter saturation voltage ·Excellent safe operating area ·Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi

5.6. 2n5954 2n5955 2n5956.pdf Size:126K _inchange_semiconductor

2N5950
2N5950

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area Ў¤ Complement to type 2N6372/6373/6374 APPLICATIONS Ў¤ Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5954 2N5955 2N5956 Fig

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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