2N6961 Datasheet. Specs and Replacement

Type Designator: 2N6961  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO204

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2N6961 datasheet

 9.2. Size:1095K  ixys
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2N6961

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2N6961

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W A PT @ T = 250C (2) 2.0 W C 0 Operating & Storage Juncti... See More ⇒

 9.4. Size:270K  siliconix
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2N6961

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Detailed specifications: 2N6913A, 2N6914, 2N6914A, 2N6914B, 2N6915, 2N6916, 2N6917, 2N6960, RU7088R, 2N6961A, 2N6962, 2N6963, 2N6964, 2N6965, 2N6966, 2N6966JANTX, 2N6966JANTXV

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.