2N6961 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N6961
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Id|ⓘ - Maximum Drain Current: 4.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 3500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO204
2N6961 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6961 Datasheet (PDF)
2n6963 2n6965 2n7100 2n7101 2n7102 2n710.pdf
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2n696 2n697.pdf
TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W APT @ T = 250C (2) 2.0 W C0Operating & Storage Juncti
Datasheet: 2N6913A , 2N6914 , 2N6914A , 2N6914B , 2N6915 , 2N6916 , 2N6917 , 2N6960 , IRFP064N , 2N6961A , 2N6962 , 2N6963 , 2N6964 , 2N6965 , 2N6966 , 2N6966JANTX , 2N6966JANTXV .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918