FRM450D Datasheet and Replacement
Type Designator: FRM450D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 260 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO204AA
FRM450D substitution
FRM450D Datasheet (PDF)
8.1. Size:47K intersil
frm450.pdf
frm450.pdf
FRM450D, FRM450R,FRM450H10A, 500V, 0.600 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 10A, 500V, RDS(on) = 0.600TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRM244H , FRM244R , FRM430D , FRM430H , FRM430R , FRM440D , FRM440H , FRM440R , 2SK3878 , FRM450H , FRM450R , FRM9130D , FRM9130H , FRM9130R , FRM9140D , FRM9140H , FRM9140R .
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